Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Synthesis, Dispersion and Optical Properties of Nanostructured FCC Gallium Nitride

Not Accessible

Your library or personal account may give you access

Abstract

Binary III-V materials have recently attracted significant interest[1]. This is due to their high bandgap energy (3.1 - 3.8 eV) which makes them suitable for creating and processing blue light. Eventually, devices based on these materials will bring advances in the fields of communications and computing. However, most of the research on III-Vs has concentrated on vapor-deposited solid films. Interest has also been focused [2] on materials with large third-order nonlinear optical susceptibility.

© 1997 Optical Society of America

PDF Article
More Like This
Third-order nonlinear optical property of platinum group metal complexes with square planar configurations

Takehito Kodzasa, Hirobumi Ushijima, Hiro Matsuda, and Toshihide Kamata
ThE.1 Organic Thin Films for Photonic Applications (OTF) 1997

Oxidation enhanced optical response on gallium nitride

L.-H. Peng, Y.-C. Hsu, C.-H. Liao, K.-T. Hsu, C.-S. Jong, C.-N. Huang, J.-K. Ho, C.-C. Chiu, and C.-Y. Chen
CWB7 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Optical and Magneto-optical Properties of Neodymium and Erbium doped Gallium Nitride Epilayers

N. Woodward, H. X. Jiang, J. Y. Lin, J. M. Zavada, E. Readinger, and V. Dierolf
CE3_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2011

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.