Abstract

Boron nitride thin films were grown on Si substrates using electron cyclotron resonance (ECR) plasma-, ion beam (IBD), and neutral beam- (NBD) assisted vapor depositions. The electrical properties of the BN films were investigated using Hall measurements. It was found that the films grown by NBD technique where p-type, those grown by ECR technique where n-type, whereas those grown by IBD where either n- to p-type depending on the ion energy. The composition of the films was investigated using EPMA, and it was found that most films were off-Stoichiometric (B/N ≤1 for ECR and B/N> 1 for NBD and IBD). The B/N ratio was higher for IBD BN films (up to 22 %). A model based on native defects centers ( nitrogen vacancy and boron anti-site) is presented to account for the conductivity of the BN films.

© 1995 Optical Society of America