Abstract

We present Raman analyses of the sources of stress in thin diamond films containing different impurity concentrations. The impurities and defects which were detected in the diamonds are the nitrogen, the silicon and the graphitic phase. Our analysis indicates that each of the diamond films exhibits an internal compressive stress. The internal stress was suggested to be due to the various defects and impurities in the samples. The correlation between the internal stress and the graphitic concentration indicates that the graphitic phase is a major contributor to the internal compressive stress in the diamond thin films.

© 1995 Optical Society of America