Abstract
We prepared doped diamond-like carbon films (DLC) by alternating deposition of low energy mass separated 12C+ and dopant ions on metal and Si substrates. If DLC could be doped n- or p-type, p-n- or p-i-n-like devices should show rectifying behavior. However, the current-voltage (I-V) characteristics of such devices are totally symmetric, indicating that no shift of the Fermi level has occurred. In addition, a compensation effect due to co-doping with N and B was not observed. I-V curves of DLC/Si heterojunctions are discussed. All I-V curves are best described by Frenkel-Poole emission.
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