Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

InP nanowire solar cell with high open circuit voltage and high fill factor

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

© 2012 Optical Society of America

PDF Article
More Like This
InP single nanowire solar cells

Z. Q. Zhong, Z.Y. Li, L. Fu, Q. Gao, Z. Li, K. Peng, L. Li, G. J. Zhang, Z. M. Wang, H. H. Tan, and C. Jagadish
PTu3B.3 Optical Nanostructures and Advanced Materials for Photovoltaics (PV) 2015

Optimization of GaAs nanowire array for solar cells

Y. Hu, R.R. LaPierre, M. Li, K. Chen, and J.-J. He
AF4B.36 Asia Communications and Photonics Conference (ACPC) 2012

III-nitride nanowire array solar cells

Jonathan J. Wierer, George T. Wang, Qiming Li, Daniel D. Koleske, and Stephen R. Lee
CTh5C.10 CLEO: Science and Innovations (CLEO_SI) 2012

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved