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1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates with Current Injection across Direct-Bonded GaAs/Si Heterointerfaces

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Abstract

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate and layer-transferred onto a Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This broad-area Fabry-Perot laser operates with current injection through the GaAs/Si interface and exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 205 A/cm2, the lowest among lasers on silicon.

© 2011 Optical Society of America

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