Abstract

Ultrafast spectroscopy in the mid-infrared wavelength range from 3 to 10 μm provides specific information on the fundamental non-equilibrium dynamics of hot carriers in semiconductors. Optical transitions located in the spectral region below the band gap allow a detailed study of single component plasmas of electrons or holes. In this paper, we present new results on subpicosecond and picosecond relaxation processes of holes in p-type GaAs and Ge, following infrared photoexcitation of the carriers.

© 1994 IEEE