Abstract
One of the questions concerning semiconductor doped glasses (SDG) is whether the nonlinearities of the crystallites at frequencies well below bandgap are affected by the electronic confinement. The problem has both conceptual and practical implications. Large effects even for modest confinement have been suggested by theoretical models, but the data so far reported are not conclusive to this regard.1–2 We here report the first quantitative determination of the imaginary part of the third order susceptibility of the crystallites in SDG. The ten samples investigated are commercial SDG manufactured by Schott, and contain CdTe (RG850–RG830) or CdSSe (CG-495 to RG 715) crystallites.
© 1994 IEEE
PDF ArticleMore Like This
G.P. Banfi, M. Ghigliazza, H. M. Tan, and A. Tomaselli
PTh048 International Quantum Electronics Conference (IQEC) 1992
G. P. Banfi, V. Degiorgio, D. Fortusini, and M. Bellini
QWD30 European Quantum Electronics Conference (EQEC) 1996
E. CANTO, E. MIESAK, D. J. HAGAN, M. J. SOILEAU, and E. W. VAN STRYLAND
WM41 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988