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  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1994),
  • paper QWD35

Spontaneous emission rate of erbium implanted in silica near a dielectric interface

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Abstract

Erbium shows photoluminescence (PL) around 1.54 µm, when incorporated in a solid host material1 Ion implantation was used to dope bulk sodalime glass with erbium at a well-defined depth2 Two samples were prepared with different narrow Er concentration profiles. Figure 1 shows the Er concentration profiles as measured by Rutherford backscattering spectrometry (RBS). Profile A is Gaussian shaped, with a mean depth of 140 nm, much less than the wavelength of the emitted light, and FWHM of 90 nm. Profile B peaks at the glass surface.

© 1994 IEEE

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