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  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1994),
  • paper QWD60

Self-induced birefringence of infrared light in n-GE

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Abstract

In the cubic many-valley semiconductors strong nonlinearity of optical characteristics, in the IR-region is connected with the redistribution of the carriers between the equivalent valleys. The main reason for this redistribution is the different carrier heating in the various valleys.1 The dielectric function becomes anisotropic and dependent on the intensity of the light. For nonsymmetric direction of the polarization of the IR-light the self-induced birefringence of light waves takes place.

© 1994 IEEE

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