Abstract

A diode-pumped microchip LiNdP₄O₁₂ (LNP) laser is operated in a two-mode lambda configuration at 1055nm and 1060nm on two of the ⁴F_3/2→⁴I_11/2 transitions. The pumping diode delivers up to one watt of cw power at 808nm. The pumping beam is focused on the 1mm thick LNP crystal with dielectric mirrors coated directly on both ends of the crystal. Outcoupling is 1% in the 1000-1 100nm range. The effective pump beam spot size w_p averaged over the absorption length ℓ_p ≅ 1/α_p = 87μm is estimated to be 40μm from the pumped section. The laser first threshold is at 110mW.

© 1998 IEEE