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  • CLEO/Europe and EQEC 2009 Conference Digest
  • (Optica Publishing Group, 2009),
  • paper JSIV1_1

THz Scattering-type Near-Field Microscopy of Semiconductor Conductivity and Mobility

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Abstract

Ultrahigh-resolution (40 nm) near-field microscopy was demonstrated using 2.5 THz illumination, at 118 µm wavelength [1]. This was made possible by the extreme THz field concentration at the metallic probe tip. The THz nanoscope thus exceeds the diffraction limit of resolution by a factor of 2000. Its 40 nm resolving power matches the needs of modern nanoscience and technology.

© 2009 IEEE

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