Bandgap Renormalization Governs the Ultrafast Response of Single-layer MoS2

E. A. A. Pogna; S. Dal Conte; M. Marsili; D. Prezzi; D. Sangalli; C. Manzoni; A. Marini; D. De Fazio; M. Bruna; I. Goykhman; A. C. Ferrari; G. Cerullo

2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
(Optica Publishing Group, 2015),
paper JSIV_1_5

Bandgap Renormalization Governs the Ultrafast Response of Single-layer MoS₂

E. A. A. Pogna, S. Dal Conte, M. Marsili, D. Prezzi, D. Sangalli, C. Manzoni, A. Marini, D. De Fazio, M. Bruna, I. Goykhman, A. C. Ferrari, and G. Cerullo

European Quantum Electronics Conference 2015

Munich Germany
21–25 June 2015
ISBN: 978-1-4673-7475-0

From the session
Optical and Ultrafast Spectroscopy of Two-dimensional Materials (JSIV_1)

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E. A. A. Pogna, S. Dal Conte, M. Marsili, D. Prezzi, D. Sangalli, C. Manzoni, A. Marini, D. De Fazio, M. Bruna, I. Goykhman, A. C. Ferrari, and G. Cerullo, "Bandgap Renormalization Governs the Ultrafast Response of Single-layer MoS2," in 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, (Optica Publishing Group, 2015), paper JSIV_1_5.

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Abstract

Two-dimensional crystals of transition metal dichalcogenides (TMDs) are attracting growing interest due to their unique electronic and optical properties, resulting in the demonstration of functional devices. On the more fundamental side, they represent ideal systems for exploring the physics of 2D semiconductors, where the electron-electron interaction is strongly enhanced by both quantum confinement and the reduced screening.

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