Abstract

For frequencies below their fundamental electronic bandgap energy, nanoparticles made from semiconductor materials can sustain electric and magnetic multipolar Mie-type resonances. Owing to the possibility to tailor these resonances by the nanoparticle geometry in combination with their low nonradiative damping rates in comparison to plasmonic nanoparticles, such semiconductor nanoparticles have recently received considerable research attention as building blocks of photonic metasurfaces [1]. Using direct-bandgap III-V semiconductors such as gallium arsenide (GaAs) or indium arsenide (InAs) as constituent materials offers the advantage of a strong second-order nonlinearity due to the their non-centrosymmetric crystal structure [2,3,4,5]. Recently, this has been used to demonstrate second-harmonic generation (SHG) in GaAs metasurfaces [3] and AlGaAs nanoantennas [4,5]. These works found that the generated second-harmonic (SH) signal exhibits complex polarization properties. However, experiments performed so far have concentrated on a single input polarization of the exciting fundamental-wave (FW) beam, oriented under an angle of 45° with respect to the c-axes of the used crystals.

© 2017 IEEE