Sn-doped Bi2Te2Se as a broadband saturable absorber for Q-switched fiber lasers

Jakub Bogusławski; Maciej Kowalczyk; Przemysław Iwanowski; Andrzej Hruban; Ryszard Diduszko; Ryszard Diduszko; Kazimierz Piotrowski; Krzysztof Dybko; Krzysztof M. Abramski; Jarosław Sotor

2017 European Conference on Lasers and Electro-Optics and European Quantum Electronics Conference
(Optica Publishing Group, 2017),
paper EI_P_13

Sn-doped Bi₂Te₂Se as a broadband saturable absorber for Q-switched fiber lasers

Jakub Bogusławski, Maciej Kowalczyk, Przemysław Iwanowski, Andrzej Hruban, Ryszard Diduszko, Kazimierz Piotrowski, Krzysztof Dybko, Krzysztof M. Abramski, and Jarosław Sotor

European Quantum Electronics Conference 2017

Munich Germany
25–29 June 2017
ISBN: 978-1-5090-6736-7

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J. Bogusławski, M. Kowalczyk, P. Iwanowski, A. Hruban, R. Diduszko, K. Piotrowski, K. Dybko, K. M. Abramski, and J. Sotor, "Sn-doped Bi2Te2Se as a broadband saturable absorber for Q-switched fiber lasers," in 2017 European Conference on Lasers and Electro-Optics and European Quantum Electronics Conference, (Optica Publishing Group, 2017), paper EI_P_13.

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Abstract

Passively Q-switched fiber lasers based on low-dimensional saturable absorbers have been extensively developed due to their efficiency, robustness and great simplicity [1]. However, an environmentally stable, industrial class lasers are still lacking. Here, we present a new material for the application as a broadband saturable absorber for large-energy Q-switched ytterbium- and erbium-doped fiber lasers. Bi₂Te₂Se:Sn is a small band gap semiconductor and ternary topological insulator [2]. It is characterized by broadband saturable absorption [3].

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