Abstract

Silicon nitride (Si₃N₄) waveguide platforms [1,2] are interesting candidates for optical interconnects and sensing applications [3] thanks to high quality passive components, transparency for NIR and visible wavelengths and their compatibility with CMOS process technology. Unfortunately, no native light sources are available for Si₃N₄ platforms and the integration of active materials, i.e. III-V compounds, is costly and often not CMOS compatible. Metal-halide perovskites are a class of solution processed semiconductors suitable for lasing [4]. Thanks to low-cost deposition by spin coating and low temperature processing (below 100°C) they are a great option for industry relevant on-chip light sources. In this work we apply the MAPbI₃ perovskite onto Si₃N₄ integrated chips to obtain, to our knowledge, the first integrated perovskite laser.

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