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  • 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper eg_p_4

Ultrafast all-optical switching in III-V semiconductor resonant nanostructures

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Abstract

All-dielectric high-index resonant nanostructures offer plentiful opportunities for tailoring characteristics of scattered radiation. In fact, the low level of ohmic losses at optical frequencies and the presence of pronounced magneto-dipolar modes in scattering spectra of dielectric nanoresonators pave the way to numerous scattering effects that could be employed for many practical applications [1]. To further advance the performance of dielectric nanophotonic devices, it is crucial to make them reconfigurable, i.e. to provide a method to manipulate optical properties of the material that they are made of. The electron-hole injection, carried out by optical means, is a promising solution for this task (Fig. 1A).

© 2019 IEEE

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