Graphene/Bi2Se3Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance

Hoon Hahn Yoon; Hoon Hahn Yoon; Faisal Ahmed; Yunyun Dai; Yunyun Dai; Henry A. Fernandez; Henry A. Fernandez; Xiaoqi Cui; Xiaoqi Cui; Xueyin Bai; Xueyin Bai; Diao Li; Diao Li; Mingde Du; Mingde Du; Harri Lipsanen; Zhipei Sun; Zhipei Sun

2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 2021),
paper ei_3_2

Graphene/Bi₂Se₃Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance

Hoon Hahn Yoon, Faisal Ahmed, Yunyun Dai, Henry A. Fernandez, Xiaoqi Cui, Xueyin Bai, Diao Li, Mingde Du, Harri Lipsanen, and Zhipei Sun

European Quantum Electronics Conference 2021

Munich Germany
21–25 June 2021
ISBN: 978-1-6654-1876-8

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Graphene Heterolayers (ei_3)

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H. H. Yoon, F. Ahmed, Y. Dai, H. A. Fernandez, X. Cui, X. Bai, D. Li, M. Du, H. Lipsanen, and Z. Sun, "Graphene/Bi2Se3Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance," in 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, OSA Technical Digest (Optica Publishing Group, 2021), paper ei_3_2.

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Abstract

A Dirac-source field-effect transistor combined based on a lateral heterochannel and a vertical tunnel junction has been realized, enabling us to explore photogating effect modulated by tunable tunneling resistance for high-performance light detection.

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