10x Reduction Imaging at 13.4 nm

D. A. Tichenor; A. K. Ray-Chaudhuri; G. D. Kubiak; S. J. Haney; K. W. Berger; R. P. Nissen; G. A. Wilkerson; R. H. Stulen; P. H. Paul; R. W. Arling; T. E. Jewell; T. E. Jewell; Edita Tejnil; Edita Tejnil; W. C. Sweatt; W. W. Chow; J. E. Bjorkholm; R. R. Freeman; M. D. Himel; A. A. MacDowell; D. M. Tennant; L. A. Fetter; O. R. Wood; W. K. Waskiewicz; D. L. White; D. L. Windt

doi:10.1364/EUL.1994.EOS.89

Extreme Ultraviolet Lithography
Technical Digest Series (Optica Publishing Group, 1994),
paper EOS.89
•https://doi.org/10.1364/EUL.1994.EOS.89

10x Reduction Imaging at 13.4 nm

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, S. J. Haney, K. W. Berger, R. P. Nissen, G. A. Wilkerson, R. H. Stulen, P. H. Paul, R. W. Arling, T. E. Jewell, Edita Tejnil, W. C. Sweatt, W. W. Chow, J. E. Bjorkholm, R. R. Freeman, M. D. Himel, A. A. MacDowell, D. M. Tennant, L. A. Fetter, O. R. Wood, W. K. Waskiewicz, D. L. White, and D. L. Windt

Extreme Ultraviolet Lithography 1994

California United States
19–21 September 1994
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EUV Optical Systems (EOS)

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D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, S. J. Haney, K. W. Berger, R. P. Nissen, G. A. Wilkerson, R. H. Stulen, P. H. Paul, R. W. Arling, T. E. Jewell, E. Tejnil, W. C. Sweatt, W. W. Chow, J. E. Bjorkholm, R. R. Freeman, M. D. Himel, A. A. MacDowell, D. M. Tennant, L. A. Fetter, O. R. Wood, W. K. Waskiewicz, D. L. White, and D. L. Windt, "10x Reduction Imaging at 13.4 nm," in Extreme Ultraviolet Lithography, Technical Digest Series (Optica Publishing Group, 1994), paper EOS.89.

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Abstract

High-resolution imaging of a reflection mask over a 0.4 mm diameter field of view has been demonstrated using a new extreme ultraviolet (EUV) imaging system. A significant reduction in debris from the laser plasma source (LPS) has extended the life of the condenser to approximately 1000 exposures without condenser maintenance. High EUV throughput of this system demonstrates the precise matching of five multilayer-coated surfaces reflecting at a center wavelength of 13.4 nm.

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