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Recovery of EUV Lithography Substrates

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Abstract

Mo/Si multilayers were removed from superpolished zerodur and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

© 1994 Optical Society of America

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