Abstract

The interaction of a high-brightness electron beam with a gas target has been proposed as a "granular" source of radiation that could generate sufficient power for extreme ultra-violet lithography (EUVL) applications. A system based on this concept that seeks to achieve writing rates in excess of 3 cm² sec^-1 at a wavelength around 130 Å is described. The potential advantage of a gas target system is the minimization of particulate debris and optics contamination. This electron-gun-driven lithography source consists of three basic components: a high-brightness, high-duty factor photocathode electron gun; a steady-state supersonic neon jet and gas collection subsystem; and output optics, imaging and exposure components. The overall systems aspects of such a EUVL source, together with the status and recent progress in the development of the electron gun and gas subsystems, are addressed. It is shown that the projected level of EUV radiation can reach the thermal limits of existing optical system designs for these wavelengths.

© 1994 Optical Society of America