Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > EUL > 1994 > TEO > TEO.161

EUV Metrology of Multilayer Optics

A. K. Ray-Chaudhuri, R. H. Stulen, W. Ng, F. Cerrina, S. Spector, Z. Tan, J. Bjorkholm, and D. Tennant

Not Accessible

Your library or personal account may give you access

Abstract

EUV metrology is central to the successful commercialization of EUV projection lithography. Metrology carried out at the EUV wavelength of 13 nm enables a gain of ~50 in precision when translated from visible light wavelengths. It also uniquely measuring wavefront errors due to lateral variations in the inherent phase shift upon reflection from the multilayer coating. We present the development of two metrology techniques: EUV Foucault and Ronchi tests.

© 1994 Optical Society of America

PDF Article
More Like This
At-Wavelength Metrology of EUV Cameras using Lateral-Shearing Interferometry

Z. Tan, A. A. MacDowell, B. La Fontaine, J. Russo, J. E. Bjorkholm, D. Tennant, D. Taylor, M. Himel, O. R. Wood, R R. Freeman, W. K. Waskiewicz, D. L. Windt, D. White, S. Spector, A. K. Ray-Chaudhuri, and R. H. Stulen
TEO.151 Extreme Ultraviolet Lithography (EUL) 1994

Multilayer Facilities for EUV Lithography

D. L. Windt and W. K. Waskiewicz
EC.47 Extreme Ultraviolet Lithography (EUL) 1994

EUV multilayer optics at the Fraunhofer IOF

Norbert Kaiser, Sergiy Yulin, Torsten Feigl, Nicolas Benoit, and Andreas Tünnermann
FA2 Optical Interference Coatings (OIC) 2007

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use