Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > EUL > 1996 > A > A208

Fabrication of MOS devices with extreme ultraviolet lithography

K. B. Nguyen, G. F. Cardinale, D. A. Tichenor, G. D. Kubiak, K. Berger, A. K. Ray-Chaudhuri, Y. Perras, S. J. Haney, R. Nissen, K. Krenz, R. H. Stulen, H. Fujioka, C. Hu, J. Bokor, D. M. Tennant, and L. A. Fetter

Not Accessible

Your library or personal account may give you access

Abstract

This paper reports the first demonstration of MOS device fabrication using extreme ultraviolet lithography. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.

© 1996 Optical Society of America

PDF Article
More Like This
Reticle blanks for extreme ultraviolet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers

S.P. Vernon, D.R. Kania, P.A. Kearney, R.A. Levesque, A.V. Hayes, B. Druz, E. Osten, R. Rajan, and H. Hedge
R44 Extreme Ultraviolet Lithography (EUL) 1996

Basic Technologies for Extreme Ultraviolet Lithography

Katsuhiko Murakami, Tetsuya Oshino, Sumito Shimizu, Wakana Wasa, Hiroyuki Kondo, Masayuki Ohtani, Noriaki Kandaka, Kiyoto Mashima, and Kazushi Nomura
EWW16 Extreme Ultraviolet Lithography (EUL) 1996

Development of Extreme Ultraviolet Lithography along the European route

F. Bijkerk
EWW13 Extreme Ultraviolet Lithography (EUL) 1996

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use