Abstract

Four of the better developed resist schemes that are out growths of DUV (248 and 193 nm) resist development are considered as candidates for EUV. They are as follows: trilayer, a thin imaging layer on top of a refractory masking/pattern transfer layer on top of a planarizing and processing layer (PPL); solution-developed, organometallic bilayer where the imaging and masking layer have been combined into one material on top of a PPL; plasma deposited, photo-definable plasma developed organo-refractory material on top of a PPL; and finally silylated resists. They are examined in a very general form without regard to the specifics of chemistry or the variations within each group, but rather as to what is common to each group and how that affects their effectiveness as candidates for a near term EUV resist. In particular they are examined with respect to sensitivity, potential resolution, optical density, etching selectivity during pattern transfer, and any issues associated with pattern fidelity such as swelling.

© 1996 Optical Society of America