X-Ray CD Metrology for Determining Cross-Sectional Profile of Semiconductor Device Patterns

Kazuhiko Omote; Yoshiyasu Ito

doi:10.1364/EUVXRAY.2016.EM8A.1

High-Brightness Sources and Light-Driven Interactions
OSA technical Digest (online) (Optica Publishing Group, 2016),
paper EM8A.1
•https://doi.org/10.1364/EUVXRAY.2016.EM8A.1

X-Ray CD Metrology for Determining Cross-Sectional Profile of Semiconductor Device Patterns

Kazuhiko Omote and Yoshiyasu Ito

Compact EUV & X-ray Light Sources 2016

Long Beach, California United States
20–22 March 2016
ISBN: 978-1-943580-09-5

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Applications III (EM8A)

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K. Omote and Y. Ito, "X-Ray CD Metrology for Determining Cross-Sectional Profile of Semiconductor Device Patterns," in High-Brightness Sources and Light-Driven Interactions, OSA technical Digest (online) (Optica Publishing Group, 2016), paper EM8A.1.

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Abstract

Glazing incidence x-ray scattering is applied for evaluating fabricated nano-patterned structure. X-ray scattering intensity from the patterned structure is collected in two-dimensionally and reasonable structure can be reproduced by comparing observed and calculated scattering intensities.

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