Highly efficient THz pulse generation in semiconductors utilizing contact-gratings technology

Nelson Mbithi; Nelson Mbithi; Gergő Krizsán; Gergő Krizsán; Gyula Polónyi; Gyula Polónyi; Zoltan Tibai; Zoltan Tibai; Zoltan Tibai; János Hebling; János Hebling; János Hebling; József A. Fülöp; József A. Fülöp; József A. Fülöp

doi:10.1364/EUVXRAY.2020.JW1A.13

OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS)
OSA Technical Digest (Optica Publishing Group, 2020),
paper JW1A.13
•https://doi.org/10.1364/EUVXRAY.2020.JW1A.13

Highly efficient THz pulse generation in semiconductors utilizing contact-gratings technology

Nelson Mbithi, Gergő Krizsán, Gyula Polónyi, Zoltan Tibai, János Hebling, and József A. Fülöp

Compact EUV & X-ray Light Sources 2020

Washington, DC United States
16–20 November 2020
ISBN: 978-1-943580-73-6

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Joint Poster Session II (JW1A)

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N. Mbithi, G. Krizsán, G. Polónyi, Z. Tibai, J. Hebling, and J. A. Fülöp, "Highly efficient THz pulse generation in semiconductors utilizing contact-gratings technology," in OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS), L. Assoufid, P. Naulleau, M. Couprie, T. Ishikawa, J. Rocca, C. Haefner, G. Sansone, T. Metzger, F. Quéré, M. Ebrahim-Zadeh, A. Helmy, F. Laurell, and G. Leo, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper JW1A.13.

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Abstract

Simulations of contact grating design parameters in the wavelength range of 1.76-3.9 µm are presented for gallium arsenide and gallium phosphide. Diffraction efficiencies as high as 80% and 90% have been achieved in GaAs and GaP respectively.

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