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Monolithic Integration of Non-Nitride Green Light Emitting Devices on Si Substrates

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We present a novel pathway towards the development of high-efficiency AlInGaP,InGaP and AlInP light emitting devices. Virtual substrates with tunable latticeconstants on Si or GaAs serve as a thermodynamically stable platform which has numerousadvantages over existing nitride-based technology. Article not available.

© 2009 Optical Society of America

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