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Conferences > FBTA > 2014 > JF2A > JF2A.21

Resistive Switching Behaviors In ZnO Thin Films Prepared By Photochemical Activation At Room Temperature

Xinghui Wu, Zhimou Xu, Zhiqiang Yu, Tangyou Sun, Tao Zhang, Wenning Zhao, Sisi Liu, and Zhichao Ma

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Abstract

ZnO thin films based resistive switching layer in the Ag/ZnO/ITO structure was fabricated by photochemical activation at low temperature through sol-gel process. The resistive switching characteristics of as fabricated Ag/ZnO/ITO structure are studied.

© 2014 Optical Society of America

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