Abstract
Semiconductor lasers, semiconductor optical amplifiers, and photodetectors that operate at wavelengths near 1.5 microns are important for optical communications and other photonics applications. High quality semiconductors with absorption edge near 1.5 microns are needed for these devices. We describe a novel semiconductor material, with band gap near 1.5 microns, which has several advantages when compared with conventional semiconductors.
© 2003 Optical Society of America
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