Photo-luminescence in InGaN/GaN Multiple Quantum Wells Grown on Silicon

G M. Wu; C. F. Hung

doi:10.1364/FIO.2005.JWA67

Frontiers in Optics
OSA Technical Digest Series (Optica Publishing Group, 2005),
paper JWA67
•https://doi.org/10.1364/FIO.2005.JWA67

Photo-luminescence in InGaN/GaN Multiple Quantum Wells Grown on Silicon

G M. Wu and C. F. Hung

Frontiers in Optics 2005

Tucson, Arizona United States
16–21 October 2005
ISBN: 1-55752-797-0

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FiO/LS Poster Session II (JWA)

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G. M. Wu and C. F. Hung, "Photo-luminescence in InGaN/GaN Multiple Quantum Wells Grown on Silicon," in Frontiers in Optics, OSA Technical Digest Series (Optica Publishing Group, 2005), paper JWA67.

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Abstract

In this paper, we discuss the photo-luminescence properties of various InGaN/GaN multiple quantum wells grown on silicon substrate using metal-organic chemical vapor deposition. The 20K PL spectra suggest the quantization effect and In-rich phenomenon.

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