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Conferences > FiO > 2005 > SSuB > SSuB3

Effect of oxygen contamination on the mobility and external parameters of C60 based thin-film transistors

A. Tapponnier, R. U. A. Khan, and P. Günter

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Abstract

The degradation of C60-FETs upon exposure to impurity gases is studied for the first time in real-time. Upon oxygen exposure, the electron mobility decreases by 3-4 orders of magnitude and ambipolar behavior is observed.

© 2005 Optical Society of America

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