Abstract
We demonstrate monolithic Ge-on-Si lasers, band-engineered by tensile strain and n-type doing, that exhibit direct gap emission around 1600 nm at room temperature. Direct gap electroluminescence from heterojunction devices verifies the feasibility of electrical pumping.
© 2010 Optical Society of America
PDF ArticleMore Like This
Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel
CB8_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2011
Jifeng Liu
IW4A.4 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2014
Jifeng Liu
IM4A.2 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2013