Hybrid Integration of III-V and Si for Photonic Integrated Circuits

Geza Kurczveil; Siddharth Jain; Di Liang; Hui Wen Chen; Martijn Heck; John Bowers

doi:10.1364/FIO.2010.FTuP1

Frontiers in Optics 2010/Laser Science XXVI
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper FTuP1
•https://doi.org/10.1364/FIO.2010.FTuP1

Hybrid Integration of III-V and Si for Photonic Integrated Circuits

Geza Kurczveil, Siddharth Jain, Di Liang, Hui Wen Chen, Martijn Heck, and John Bowers

Frontiers in Optics 2010

Rochester, New York United States
24–28 October 2010
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G. Kurczveil, S. Jain, D. Liang, H. W. Chen, M. Heck, and J. Bowers, "Hybrid Integration of III-V and Si for Photonic Integrated Circuits," in Frontiers in Optics 2010/Laser Science XXVI, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper FTuP1.

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Abstract

We review III-V on silicon-on-insulator (SOI) heterogeneous integration for the demonstration of lasers, suitable for inter-chip and intra-chip optical interconnects. A low temperature oxygen plasma enhanced bonding technology is used to realize the III-V/SOI integration. The realization of silicon AWG lasers, quantum well intermixed DFB lasers and micro ring lasers on the III-V/SOI material platform is discussed.

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