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Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting

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Abstract

We demonstrate sub 10 ps photo-carrier response times in an electroabsoption modulator having a custom epitaxy structure. The structure used quantum well offsetting and carbon doping to achieve a 2.5 ps response time, when biased at −4.5 V.

© 2011 Optical Society of America

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