Abstract

Electro-optic modulators are key parts of optical transmitters in optical communication [1]. With an on-going miniaturization of photonic circuits, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength [2]. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak nonlinear electro-optical properties [3]. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth [4]. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. In this work we showcase two novel examples of electro-optic modulators for ultrafast and low-power future transmitters. Both devices are based on novel materials, namely Graphene and Indium-Tin-Oxide (ITO). Both devices are based on the Silicon-on-Insulator (SOI) platform facilitating ease in monolithic integration in photonic integrated circuits.

© 2013 Optical Society of America