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Conferences > FiO > 2014 > FTu1D > FTu1D.5

Ultralow switching energy germanium electro-optical modulator

Julian Sweet, Joshua Hendrickson, and Richard Soref

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Abstract

A lateral p-n junction nanobeam electro-optic modulator for the 8 micron regime is presented. Owing to a strong free-carrier absorption effect, an ultralow switching energy is achieved, while utilizing a small footprint, monolithic, and VLSI-compatible implementation.

© 2014 Optical Society of America

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