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Conferences > FiO > 2015 > FTh4B > FTh4B.4

Selective growth and coalescence of GaAs on Si (001) substrates using a round-hole nanopatterned SiO2 mask

Yunrui He, Jun Wang, Haiyang Hu, Qi Wang, Yongqing Huang, and Xiaomin Ren

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Abstract

The epitaxy of GaAs on round-hole nanopatterned GaAs/Si substrates is studied. Faceted growth fronts and the tilt of GaAs pillars are observed. Experimental results show that the deposition selectivity is not sensitive to growth temperature.

© 2015 Optical Society of America

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