Ink Deposition of Quaternary Amorphous Oxide Semiconductors for Electronic and Optoelectronic Devices

Chun-Li Lo; Rebecca L. Peterson

doi:10.1364/FIO.2015.FTh4F.1

Frontiers in Optics 2015
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper FTh4F.1
•https://doi.org/10.1364/FIO.2015.FTh4F.1

Ink Deposition of Quaternary Amorphous Oxide Semiconductors for Electronic and Optoelectronic Devices

Chun-Li Lo and Rebecca L. Peterson

Frontiers in Optics 2015

San Jose, California United States
18–22 October 2015
ISBN: 978-1-943580-03-3

From the session
Three-Dimensional Optical Structure Design, Fabrication and Nanopatterning II (FTh4F)

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C. Lo and R. L. Peterson, "Ink Deposition of Quaternary Amorphous Oxide Semiconductors for Electronic and Optoelectronic Devices," in Frontiers in Optics 2015, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper FTh4F.1.

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Abstract

High-quality amorphous oxide thin films with band-edge absorption in the ultraviolet are deposited using a sol-gel ink process. We control optical and electrical properties of semiconducting zinc tin oxide by incorporating quaternary alloy elements.

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