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Fast, low-energy switching in GaAs photonic crystal cavities

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Abstract

We study free carrier dynamics in gallium arsenide (GaAs) photonic crystal cavities with resonances near the material band edge. We show that low estimated switching energy of 3 femtojoules can be achieved for 45% transmission contrast. We also present an architecture for larger photonic circuits comprising of large arrays of these cavities.

© 2015 Optical Society of America

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