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The effect of oxygen partial pressures on the formation of cuprous oxide thin films for optoelectronic applications

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We report on the deposition of Cu2O thin films with different experimental parameters by using direct current (DC) magnetron sputtering. Films deposition was controlled by temperature, oxygen flow rate and deposition time. The deposited Cu2O thin films were characterized by studying crystallographic structure with XRD, and surface morphology by field-emission scanning electron microscopy (FE-SEM). These experimental results revealed that sputtering parameters such as substrate temperature and the O2 flow rate are the important factor that strongly influencing the formation of high-quality Cu2O thin films. Our study demonstrated that the optimized high-quality Cu2O thin films can be utilized for many technological applications such as solar cells, gas sensing and fuel cells.

© 2015 Optical Society of America

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