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Conferences > FiO > 2015 > JTu4A > JTu4A.24

Pulsed Laser Deposited GeTe-rich GeTe-Sb2Te3 Thin Films

M. Bouška, V. Nazabal, S. Pechev, A. Moreac, J. Gutwirth, L. Beneš, and P. Němec

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Abstract

Pulsed laser deposition was employed for the fabrication of GeTe-Sb2Te3 thin films with different (GeTe):(Sb2Te3) ratio, 6:1, 8:1, 10:1, and 12:1. The characterization of thin films in as-deposited state (amorphous phase) as well as in crystalline state (induced by thermal annealing) was performed.

© 2015 Optical Society of America

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