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High-Mobility Transparent Conducting Oxides for Compact Epsilon-Near-Zero Silicon Integrated Optical Modulators

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Abstract

We study the role of carrier mobility in transparent conducting oxides integrated into epsilon-near-zero modulators. High-mobility materials including CdO enable sub-micron length electroabsorption modulators through >4dB/µm extinction ratios.

© 2017 Optical Society of America

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