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The cutoff and critical power of Modulation Instability (MI) gain in Silicon-on-insulator (SOI) Nanowaveguides

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Abstract

We have studied the effect of free-carriers (FC) on MI gain in SOI nanowaveguides. The MI analysis is carried out in the nanowaveguides with anomalous and normal group velocity dispersion (GVD) parameters.

© 2017 Optical Society of America

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