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Strain Induced Enhanced Photodetector based on Few-layered MoTe2

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Abstract

Here, we demonstrate a strain-induced enhanced photodetector based on a few-layered MoTe2 integrating onto a non-planarized silicon photonic platform. The photodetector shows high photo responsivity (~0.5 A/W) as compared to planarized photodetector at 1550 nm.

© 2020 The Author(s)

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More Like This
Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

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