Abstract
Laser diodes with parabolic and rectangular AlGa(As,Bi)/AlGaAs QWs were grown by MBE on n-GaAs(001). Operating wavelength was controlled by QW width and material composition. Laser bars processed by UV lithography were characterized by electroluminescence and I-V measurements.
© 2020 The Author(s)
PDF Article | Presentation VideoMore Like This
Simona Pūkienė, Jan Devenson, Vladimir Agafonov, Algirdas Jasinskas, Evelina Dudutienė, Bronislovas Čechavičius, Karolis Stašys, and Renata Butkutė
JTu3A.13 Frontiers in Optics (FiO) 2019
Cheng Liu, Kevin Lee, Galen Harden, Anthony Hoffman, Huili (Grace) Xing, Debdeep Jena, and Jing Zhang
AF1I.2 CLEO: Applications and Technology (CLEO:A&T) 2020
Haiding Sun
AF1I.4 CLEO: Applications and Technology (CLEO:A&T) 2020