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EIT-based third-harmonic generation using all-dielectric metasurfaces modulated by phase-change materials

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Abstract

We numerically design an EIT-based amorphous silicon metasurface controlled with a GST-based Fabry-Perot (F-P) cavity to establish a unique multi-level third harmonic generation switch with a maximum modulation depth of ~70 dB at the resonant band.

© 2020 The Author(s)

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