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Nonresonant Nonlinear Absorption in n-Ge, GaAs, and ZnSe in the Long-wave Infrared

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Abstract

We measure nonlinear absorption in semiconductors using nanosecond and picosecond CO2 laser pulses. Absorption strength scales inversely with band gap energy. Effective absorption coefficients in n-Ge are unchanged over intensities from 0.1-2 GW/cm2.

© 2020 The Author(s)

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