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Conferences > FiO > 2021 > JTu1A > JTu1A.34

Design and Simulation of Double Quantum Well Vertical Cavity Tunneling Injection Transistor Laser for Technical Characteristics Improvement

Ghazaleh Nourbakhsh, Hassan Kaatuzian, and Behzad Namvar

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Abstract

Here, we proposed a Tunnel-Injection graded-base Transistor Laser with double quantum well. We achieved 50% reduction in threshold current, 13.6GHz optical bandwidth enhancement, 0.9 increment in DC-current gain compared to previous reported results.

© 2021 The Author(s)

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