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Conferences > FiO > 2022 > FM1E > FM1E.2

Narrow-linewidth GaN Lasers based on an AlN Photonic Integrated Circuit

Jorge A. Holguín-Lerma, Yubo Wang, Yu Guo, Mattia Vezzoli, and Hong X. Tang

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Abstract

Towards homogeneous group-III-Nitride integration, an aluminum nitride (AlN) photonic circuit is developed to create narrow-linewidth emission in gallium nitride (GaN) laser diodes. Single-mode emission at blue-to-green wavelengths is demonstrated with a linewidth of 1 MHz.

© 2022 The Author(s)

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