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Low-Capacitance, High-Speed O-band GeSi Quantum-Confined Stark Effect Electro Absorption Modulator

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Abstract

we present O-band GeSi Quantum-Confined Stark Effect electro-absorption modulators with ultra-low capacitance of ~38fF and 3-dB modulation bandwidth beyond 50 GHz, integrated in a 220nm silicon photonics platform.

© 2022 The Author(s)

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More Like This
60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator

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Tu1D.3 Optical Fiber Communication Conference (OFC) 2021

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Tu3D.7 Optical Fiber Communication Conference (OFC) 2016

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